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RQK0204TGDQA
Silicon N Channel MOS FET Power Switching
REJ03G1324-0300 Rev.3.00 Jun 12, 2006
Features
* Low on-resistance RDS(on) = 100 m typ (VGS = 4.5 V, ID = 1.2 A) * Low drive current * High speed switching * 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3 D 3 1 2 2 G 1. Source 2. Gate 3. Drain
S 1
Note:
Marking is "TG".
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Note1 Drain peak current ID(pulse) Body - drain diode reverse drain current IDR Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Ratings 20 12 2.3 8.0 2.3 0.8 150 -55 to +150 Unit V V A A A W C C
Rev.3.00 Jun 12, 2006 page 1 of 6
RQK0204TGDQA
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min 20 12 -- -- 0.4 -- -- 1.5 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 100 146 3.0 127 33 14 11 28 24 7 1.5 0.3 0.4 0.85 Max -- -- 10 1 1.4 130 204 -- -- -- -- -- -- -- -- -- -- -- 1.1 Unit V V A A V m m S pF pF pF ns ns ns ns nC nC nC V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 10 V, VDS = 0 VDS = 20 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 1.2 A, VGS = 4.5 VNote3 ID = 1.2 A, VGS = 2.5 VNote3 ID = 1.2 A, VDS = 10 VNote3 VDS = 10 V VGS = 0 f = 1 MHz ID = 1.2 A VGS = 10 V RL = 8.3 Rg = 4.7 VDD = 10 V VGS = 5 V ID = 2.3 A IF = 2.3 A, VGS = 0 Note3
Rev.3.00 Jun 12, 2006 page 2 of 6
RQK0204TGDQA
Main Characteristics
Maximum Channel Power Dissipation Curve
1 100 Operation in this area is limited by RDS(on)
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
0.8
10
1 m
10
0 10 s
0.6
s
PW
s m
1
D
=
C
10 0
0.4
O
pe
m s
ra
tio
0.2 0
0.1
Ta = 25C 1 Shot Pulse
n
0
50
100
150
0.01 0.01
0.1
1
10
100
Ambient Temperature Ta (C)
*When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
8
10 V 7V 5V Pulse Test Tc = 25C
Typical Transfer Characteristics (1)
8 VDS = 10 V Pulse Test 25C
3.0 V
Drain Current ID (A)
6
Drain Current ID (A)
2.8 V 2.6 V 2.4 V 2.2 V 2.0 V
3.2 V 3.4 V 5V
6
Tc = -25C
75C
4
4
2
1.8 V 1.6 V
2
0
VGS = 0 V
0
2
4
6
8
10
0
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Typical Transfer Characteristics (2)
1 VDS = 10 V Pulse Test
Case Temperature
Gate to Source Cutoff Voltage VGS(off) (V)
1.5 VDS = 10 V Pulse Test ID = 10 mA 1.0
Drain Current ID (A)
0.1 Tc = 75C 0.01 25C
0.5
1 mA 0.1 mA
0.001
-25C
0.0001 0
0.5
1
1.5
2
2.5
3
0 -25
0
25
50
75
100 125 150
Gate to Source Voltage VGS (V)
Case Temperature Tc (C)
Rev.3.00 Jun 12, 2006 page 3 of 6
RQK0204TGDQA
Drain to Source Saturation Voltage VDS(on) (mV)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
500
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS(on) (m)
Pulse Test Tc = 25C
1000
Pulse Test Tc = 25C
400
300 2.3 A 1.2 A 0.8 A
VGS = 2.5 V 100
4.5 V 10 V
200
100 0.5 A 0 0 2 4 6 8
10
10 0.1
1
10
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Case Temperature
Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature
Drain to Source on State Resistance RDS(on) (m)
Drain to Source on State Resistance RDS(on) (m)
300 ID = 2.3 A 1.2 A 200
200 Pulse Test VGS = 4.5 V ID = 2.3 A 150 1.2 A
250
150 0.5 A 100 50 -25
0.8 A
100 0.5 A 0.8 A
Pulse Test VGS = 2.5 V 0 25 50 75 100 125 150
50 -25
0
25
50
75
100 125 150
Case Temperature Tc (C)
Case Temperature Tc (C)
Zero Gate Voltage Drain current vs. Case Temperature
10000 Pulse Test VGS = 0 V 1000 VDS = 20 V 100
Forward Transfer Admittance |yfs| (S)
10 Pulse Test VDS = 10 V -25C
1 25C Tc = 75C 0.1
Zero Gate Voltage Drain current
IDSS (nA)
Forward Transfer Admittance vs. Drain Current
10
1 0.1 -25
0.01 0.01
0.1
1
10
0
25
50
75
100 125 150
Drain Current ID (A)
Case Temperature Tc (C)
Rev.3.00 Jun 12, 2006 page 4 of 6
RQK0204TGDQA
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
40 16 1000
Switching Characteristics
VDD = 10 V VGS = 4.5 V Rg = 4.7 PW = 5 s Tc = 25C tr
30
12
10 V 5V 20 VDD = 20 V 10 V 10 5V VDS 0 1 2 ID = 2.3 A Tc = 25C 3 4 0 4 VGS 8
Switching Time t (ns)
VDD = 20 V
100
td(off) 10 td(on) tf
0
1 0.1
1
10
Gate Charge Qg (nc)
Drain Current ID (A)
Typical Capacitance vs. Drain to Source Voltage
1000 250 240
Input Capacitance vs. Gate to Source Voltage
Ciss, Coss, Crss (pF)
Ciss 100 Coss Crss 10
VGS = 0 V f = 1 MHz
230
Ciss (pF)
220 210 200 190 180 170 VDS = 0 V f = 1 MHz 0 2 4 6 8 10
1 0
5
10
15
20
-10 -8 -6 -4 -2
Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage
8
Gate to Source Voltage VGS (V) Body-Drain Diode Forward Voltage vs. Case Temperature
0.7 VGS = 0 0.6 0.5 ID = 10 mA 0.4 0.3 0.2 0.1 25 1 mA
Reverse Drain Current IDR (A)
10 V 6 5V
Pulse Test Tc = 25C
4
2 -5, -10 V 0 0 VGS = 0 V 0.4 0.8 1.2 1.6 2.0
Body-Drain Diode Forward Voltage VSDF (V)
50
75
100
125
150
Source to Drain Voltage VSD (V)
Case Temperature Tc (C)
Rev.3.00 Jun 12, 2006 page 5 of 6
RQK0204TGDQA
Package Dimensions
Package Name MPAK JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Previous Code MPAK(T) / MPAK(T)V MASS[Typ.] 0.011g
D e
A
Q
c
E
HE
L A A xM S A b
L1 A3 e
LP
Reference Dimension in Millimeters Symbol Min Nom Max
A2
A
A1 S b b1 c b2 A-A Section
e1
c1
I1
Pattern of terminal position areas
A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q
1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25
1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8
1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05
1.95 0.3
Ordering Information
Part Name RQK0204TGDQATL-E Quantity 3000 pcs. Shipping Container 178 mm reel, 8 mm Emboss taping
Rev.3.00 Jun 12, 2006 page 6 of 6
Sales Strategic Planning Div.
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